J. E. Fischer, E. Werwa, and P. A. Heiney, Appl. Phys. A56 , 193-196 (1993).
We have used both reflection-geometry and grazing-incidence-geometry x-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Angstrom. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9 degree distribution of crystallite orientations, a 450 Angstrom in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.
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